中国科学院半导体研究所，集成光电子学国家重点联合实验室，超晶格国家重点实验室，北京 100083
利用低温(200℃)生长的GaAs材料作为吸收层制备了GaAs基1．55μm谐振腔增强型(RCE)光电探测器，对其光电特性进行了分析、研究．无光照0偏压下探测器暗电流为8．0×10－12A；光电流谱峰值波长1563nm；响应谱线半宽4nm，具有良好的波长选择性．
探测器 谐振腔增强 分布布喇格反射镜 Detector LT－GaAs LT-GaAs RCE DBR
Author Affiliations
Abstract
State Key Laboratory on Integrated Optoelectronics, National Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083
Continuous wave operation of a semiconductor laser diode based on five stacks of InAs quantum dots (QDs) embedded within strained InGaAs quantum wells as an active region is demonstrated. At room temperature, 355-mW output power at ground state of 1.33-1.35 microns for a 20-micron ridge-waveguide laser without facet coating is achieved. By optimizing the molecular beam epitaxy (MBE) growth conditions, the QD density per layer is raised to 4*10^(10) cm^(-2). The laser keeps lasing at ground state until the temperature reaches 65 Celsius degree.
160.6000 Semiconductors, including MQW 140.5960 Semiconductor lasers Chinese Optics Letters
2006, 4(7): 413
Author Affiliations
Abstract
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
Resonant cavity enhancement (RCE) typed optical detector and modulator which operating at wavelength band of 1.06 μm is reported. The peak quantum efficiency of detector is reasonably high as 50% without bias, and the photocurrent contrast ratio of modulator is 3.6 times at -3.5 V as compared to 0 V. The incident angle dependence of RCE device’s photoelectric response is investigated carefully.
120.2230 v 230.5160 photodetectors 230.4110 modulators Chinese Optics Letters
2003, 1(6): 06323
采用GaAs/GaAlAs多层液相外延技术研制成一种光触发异质结负阻激光器。文中简述了器件的工作原理和某些特性。
